首先是发展三元化合物,如镓铝砷(gaalas),它能够与砷化镓(gaas)衬底晶格匹配,当铝的成分增加时,发射波长蓝移。然而,gaalas并不能够与gaas的晶格非常好地匹配,因此最关键的一步是四元化合物,如ingaasp,这提供了匹配晶格间距以及所需波长的第二个自由度。mit林肯实验室的j. jim hsieh实现了这一步,1977年他报道了室温下运行的ingaasp激光器输出1.25µm的激光。[10]随后不久,也是在inp衬底上,成分略有不同的ingaasp激光器问世,应用于1.3µm和1.55µm的低损耗光纤窗口。通过调整四种元素的组分,ingaasp激光器的输出波长覆盖了一个重要的波长范围(见图3)。
通过优化gaas衬底激光器的发射材料组分,可将其输出波长拓展到红光范围,例如使用algainp可使输出波长短至620nm。此后,1996年日亚公司(nichia)的shuji nakamura发明了氮化铟镓(gainn)半导体激光器,激光跨入了光谱的蓝光波段。[11]蓝光半导体激光器目前属于标准产品,但绿光半导体激光器仍然很难实现。在今年1月份的photonics west 2010会议上,startup kaai公司的nakamura报道已经开发出了523nm的ingan半导体激光器,填补了在半导体激光器在输出光谱中的空缺。
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